型号:

SPB35N10 G

RoHS:无铅 / 符合
制造商:Infineon Technologies描述:MOSFET N-CH 100V 35A D2PAK
详细参数
数值
产品分类 分离式半导体产品 >> FET - 单
SPB35N10 G PDF
产品变化通告 Product Discontinuation 22/Feb/2008
标准包装 1,000
系列 SIPMOS®
FET 型 MOSFET N 通道,金属氧化物
FET 特点 标准
漏极至源极电压(Vdss) 100V
电流 - 连续漏极(Id) @ 25° C 35A
开态Rds(最大)@ Id, Vgs @ 25° C 44 毫欧 @ 26.4A,10V
Id 时的 Vgs(th)(最大) 4V @ 83µA
闸电荷(Qg) @ Vgs 65nC @ 10V
输入电容 (Ciss) @ Vds 1570pF @ 25V
功率 - 最大 150W
安装类型 表面贴装
封装/外壳 TO-263-3,D²Pak(2 引线+接片),TO-263AB
供应商设备封装 P-TO263-3
包装 带卷 (TR)
其它名称 SP000102172
SPB35N10GXT
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